Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S229000, C438S630000, C438S933000, C257SE21130, C257SE21438, C257SE33076
Reexamination Certificate
active
11065324
ABSTRACT:
An integration process where a first semiconductor protective layer and a second semiconductor protective layer are formed to protect the first and second semiconductor materials, respectfully, during processing to form an optical device, such as a photodetector, and a transistor on the same semiconductor. The first semiconductor protective layer protects the semiconductor substrate during formation of the second semiconductor layer, and the second semiconductor layer protects the second semiconductor material during subsequent processing of the first semiconductor. In one embodiment, the first semiconductor includes silicon and the second semiconductor material includes germanium.
REFERENCES:
patent: 6512229 (2003-01-01), Sasaki
patent: 6635110 (2003-10-01), Luan et al.
patent: 6784466 (2004-08-01), Chu et al.
patent: 6939814 (2005-09-01), Chan et al.
patent: 7052946 (2006-05-01), Chen et al.
patent: 2004/0180536 (2004-09-01), Fujiwara et al.
Masini, Gianlorenzo et al.; “A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics”; Physics E; 2002; pp. 614-619 + cover sheet; vol. 16 (No. 3-4);614-19-2003; Elsevier Science B.V; US.
Masini, Gianlorenzo et al; “Monolithic of near infrared Ge photodetectors with Si complementary metal-oxide-semiconductor readout electronics”; Applied Physics Letters; May 6, 2002; pp. 3268-3270 + cover sheet; vol. 80, No. 18; American Institute of Physics; USA.
Colace,L. et al; “Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates”; Applied Physics Letters; Mar. 6, 2000; pp. 1231-1233; vol. 76, No. 10; American Institute of Physics; USA.
Luan, Hsin-Chiao et al; “High-quality Ge epilayers on Si with low threading-disclocation densities”; Applied Physics Letters; Nov. 8, 1999; pp. 2909-2911; vol. 75, No. 19; American Institute of Physics; USA.
Samavedam, S.B. et al.; “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers”; Applied Physics Letters; Oct. 12, 1998; pp. 2125-2127; American Institute of Physics; USA.
Presting, Hartmut; “Near and mid infrared silicon/germanium based photodetection”; Thin Solid Films 321 (1998) 186-195; pp. 186-194; Elsevier Science S.A. USA.
Freescale Semiconductor Inc.
Pham Thanh V.
Smith Matthew
Vo Kim-Marie
LandOfFree
Method of forming a semiconductor device and an optical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a semiconductor device and an optical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a semiconductor device and an optical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3766155