Non-volatile memory device with conductive sidewall spacer...

Details Non-volatile memory device with conductive sidewall spacer... Non-volatile memory device with conductive sidewall spacer...

2007-05-15

2007-05-15

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S217000, C438S304000, C438S257000, C438S596000, C438S282000, C438S289000, C438S291000, C257SE21196, C257SE21636, C257SE21438

Reexamination Certificate

active

11024472

ABSTRACT:
The present invention relates to a non-volatile memory device having conductive sidewall spacers and a method for fabricating the same. The non-volatile memory device includes: a substrate; a gate insulation layer formed on the substrate; a gate structure formed on the gate insulation layer; a pair of sidewall spacers formed on sidewalls of the gate structure; a pair of conductive sidewall spacers for trapping/detrapping charges formed on the pair of sidewall spacers; a pair of lightly doped drain regions formed in the substrate disposed beneath the sidewalls of the gate structure; and a pair of source/drain regions formed in the substrate disposed beneath edge portions of the pair of conductive sidewall spacers.

REFERENCES:
patent: 6140171 (2000-10-01), Allen et al.
patent: 6528404 (2003-03-01), Kim
patent: 2005/0218445 (2005-10-01), Van Duuren et al.
patent: 1998-073410 (1998-11-01), None
patent: 10-0206985 (1999-04-01), None
patent: 2002-0019139 (2002-03-01), None

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