Method of manufacturing a transistor of a semiconductor device

Details Method of manufacturing a transistor of a semiconductor device Method of manufacturing a transistor of a semiconductor device

2007-03-13

2007-03-13

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S265000, C438S595000, C257SE21682

Reexamination Certificate

active

11007918

ABSTRACT:
Disclosed are a semiconductor device and a method of manufacturing the same. According to the present invention, the transistor of the semiconductor device comprises a stack type gate in which a tunnel oxide film, a floating gate, a dielectric film and a control gate are sequentially stacked on a semiconductor substrate, a gate oxide film that is formed on the semiconductor substrate below the floating gate with respect to the tunnel oxide film, wherein the gate oxide film is formed along the boundary of some of the bottom and side of the floating gate, and floating nitride films that are buried at gaps between the gate oxide film formed on the semiconductor substrate and the gate oxide film formed along the boundary of some of the bottom and side of the floating gate, wherein the floating nitride films serve as a trap center of a hot charge and store 1 bit charge. The transistor of the semiconductor device can operate as a 2-bit or 3-bit cell transistor.

REFERENCES:
patent: 6238978 (2001-05-01), Huster
patent: 6352895 (2002-03-01), Lam
patent: 2002/0146886 (2002-10-01), Chern

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