Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-16
2007-01-16
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000, C257SE21429
Reexamination Certificate
active
10867845
ABSTRACT:
Embodiments of the invention include sequentially forming a pad oxide film and a mask film on a semiconductor substrate, and then forming an opening for partially exposing the pad oxide film. An undercut region is formed using the mask film as an etch mask, exposing a partial surface of the substrate. A spacer is formed surrounding both sidewalls of the mask film, and a recess is formed in the substrate. A gate oxide film, a gate electrode, a gate insulation film, a gate spacer, and source and drain regions are also formed. A resultant transistor structure has a small open critical dimension that improves process margin and provides uniformity to the recess depth, and removes a requirement that a bottom critical dimension of a subsequently formed self-aligned contact should be small. Degradation of the gate oxide film and increases in leakage current may also be prevented.
REFERENCES:
patent: 4857477 (1989-08-01), Kanamori
patent: 5674775 (1997-10-01), Ho et al.
patent: 5817558 (1998-10-01), Wu
patent: 6103635 (2000-08-01), Chau et al.
patent: 2002/0197780 (2002-12-01), Lai et al.
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