Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-07-03
2007-07-03
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S230030
Reexamination Certificate
active
11185375
ABSTRACT:
There are provided a semiconductor memory device and a method of precharging global input/output (I/O) lines thereof, for reducing power consumption during a precharge operation. The semiconductor memory device includes a pair of first global I/O lines; a pair of second global I/O lines; a first precharge circuit for precharging the pair of first global I/O lines in response to a first precharge enable signal; a second precharge circuit for precharging the pair of second global I/O lines in response to a second precharge enable signal; a switch for connecting the pair of first global I/O lines and the pair of second global I/O lines; a first precharge driver for enabling the first precharge enable signal during a precharge operation; and a second precharge driver for enabling the second precharge enable signal during a precharge operation.
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F. Chau & Assoc. LLC
Nguyen Van-Thu
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