Method of recording information in nonvolatile semiconductor...

Details Method of recording information in nonvolatile semiconductor... Method of recording information in nonvolatile semiconductor...

2007-01-30

2007-01-30

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S278000, C438S910000, C257S317000, C257S391000, C365S185140, C365S185260, C365S185150

Reexamination Certificate

active

11060297

ABSTRACT:
A nonvolatile semiconductor memory includes a transistor, one or two resistance-change portions, and one or two charge accumulation portions. The transistor has a control electrode, first main electrode region, and second main electrode region. Each resistance-change portion is of a second conductivity type having impurity concentration lower than that of the first and second main electrode regions. The charge-accumulation portions are provided on the associated resistance-change portions. Each charge accumulation portion has an insulating layer, and is capable of accumulating charge.

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