Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-10
2007-04-10
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S641000, C438S644000, C257S758000, C257SE23075
Reexamination Certificate
active
10707693
ABSTRACT:
A metallization process and material system for metallizing either blind or through vias in silicon, involving forming a low coefficient of thermal expansion composite or suspension, relative to pure metals, such as copper, silver, or gold, and filling the via holes in the silicon with the paste or suspension. The suspensions sinter with minimal bulk shrinkage, forming highly conductive structures without the formation of macroscopic voids. The selected suspension maintains a coefficient of thermal expansion closer to that of silicon.
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IBM Technical Disclosure Bulletin, “Active Silicon Chip Carrier” Jul. 1972, pp. 657-657.
Casey Jon A.
Sundlof Brian R.
Blecker Ira D.
Curcio Robert
DeLio & Peterson LLC
Estrada Michelle
Toledo Fernando L.
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