Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S373000, C438S304000
Reexamination Certificate
active
11266371
ABSTRACT:
The method of manufacturing the semiconductor device that includes a high voltage MOS transistor with high operating voltage under both high and low gate voltages with low-cost is disclosed. When manufacturing the high voltage MOS transistor, a portion of a gate insulation film is removed to form an opening that exposes an outside area of the active area, which is outside of the central area where a gate electrode will be formed. A shallow grade layer is formed by implanting impurities into an opening with an energy that does not permit penetration of impurity ions through the gate insulation film.
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Dinh Thu-Huong
Kawasaki Microelectronics Inc.
Oliff & Berridg,e PLC
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