Method of manufacturing a semiconductor device having a...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S618000, C257SE21575

Reexamination Certificate

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10732518

ABSTRACT:
An insulating portion of the respective wiring layers for a semiconductor device is constituted of insulating films. The one insulating film is made of a material whose conductivity is higher than that of the other insulating film that is made of an ordinary silicon oxide film and is provided in contact with the wiring. An electric charge accumulated in the wiring generated in the course of manufacture of the semiconductor device is discharged through the one insulating film at a stage where a charge accumulation in the wiring is low. This permits the heat release value generated through the discharge can be suppressed to a low level, and the short-circuiting failure between adjacent wirings can be suppressed or prevented.

REFERENCES:
patent: 2004/0089924 (2004-05-01), Yuasa et al.
patent: 8-204006 (1996-08-01), None

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