Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-24
2007-04-24
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
11385932
ABSTRACT:
A semiconductor device is proposed which includes: a semiconductor substrate of a first conductivity type; a channel region formed at a surface of the semiconductor substrate;source and drain regions of a second conductivity type formed at both sides of the channel region in the semiconductor substrate; an insulating layer covering the channel region; and a gate electrode formed on the insulating layer, the insulating layer containing impurity atoms in such a manner that a concentration thereof is non-uniformly distributed along a surface parallel to the semiconductor substrate.
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Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pham Long
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