Method for fabricating thermal compliant semiconductor chip...

Details Method for fabricating thermal compliant semiconductor chip... Method for fabricating thermal compliant semiconductor chip...

2007-09-04

2007-09-04

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

10925302

ABSTRACT:
A new method to form an integrated circuit device is achieved. The method comprises providing a substrate. A sacrificial layer is formed overlying the substrate. The sacrificial layer is patterned to form temporary vertical spacers where conductive bonding locations are planned. A conductive layer is deposited overlying the temporary vertical spacers and the substrate. The conductive layer is patterned to form conductive bonding locations overlying the temporary vertical spacers. The temporary vertical spacers are etched away to create voids underlying the conductive bonding locations.

REFERENCES:
patent: 3171796 (1965-03-01), Stephens et al.
patent: 4857481 (1989-08-01), Tam et al.
patent: 6028364 (2000-02-01), Ogino et al.
patent: 6197613 (2001-03-01), Kung et al.
patent: 6395581 (2002-05-01), Choi
patent: 6423571 (2002-07-01), Ogino et al.
patent: 6521970 (2003-02-01), Takiar et al.

Affiliated with

Also associated with

Rating

Method for fabricating thermal compliant semiconductor chip... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating thermal compliant semiconductor chip..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating thermal compliant semiconductor chip... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3734797