Method of forming a shallow trench isolation structure

Details Method of forming a shallow trench isolation structure Method of forming a shallow trench isolation structure

2007-07-03

2007-07-03

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C257S510000, C257SE21546

Reexamination Certificate

active

11076707

ABSTRACT:
A method and system for isolation trenches includes forming isolation trenches in a semiconductor substrate, filling the trenches with a filler material, creating voids near top edges of the trenches and annealing by a gaseous ambient to reflow the edges of the trenches causing the edges to become rounded and overhang the trench. The filler material may be a dielectric. Transistors are then formed in close proximity to the trenches and may include source/drain regions formed in the rounded portion of the semiconductor substrate that overhangs the trench.

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