Highly reliable amorphous high-k gate dielectric ZrO x N y

Details Highly reliable amorphous high-k gate dielectric ZrO x N y Highly reliable amorphous high-k gate dielectric ZrO x N y

2007-04-17

2007-04-17

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000

Reexamination Certificate

active

10863953

ABSTRACT:
A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically stable such that the gate dielectrics formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The addition of nitrogen to the microstructure of the gate dielectric promotes an amorphous phase that further improves the electrical properties of the gate dielectric. The process shown is performed at lower temperatures than the prior art, which inhibits unwanted species migration and unwanted reactions with the silicon substrate or other structures. By using a thermal evaporation technique to first deposit a metal layer, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate dielectric.

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