Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-01-02

2007-01-02

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S278000, C438S508000, C257S758000

Reexamination Certificate

active

10096754

ABSTRACT:
The method of manufacturing a semiconductor device comprises the steps of: forming a gate electrode on a semiconductor substrate through a gate insulated film; forming source/drain regions to be adjacent to the gate electrode forming an Al wiring through an interlayer insulating film covering the gate electrode; and implanting impurity ions into a surface of the semiconductor substrate using as a mask the Al wiring and a photoresist formed thereon, thereby writing information into each of elements constituting a mask ROM and changing an outputting manner at an output port.

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