Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-06
2007-03-06
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C257SE21679
Reexamination Certificate
active
11082094
ABSTRACT:
A method for removing nanoclusters from a semiconductor device includes etching a selected portion of an insulating layer, flowing a reducing gas over the semiconductor device at a temperature in a range of 400–900 degrees Celsius, and flowing a gas comprising halogen over the semiconductor device at a temperature in a range of 400–900 degrees Celsius. In another form, a method for removing the nanoclusters includes implanting germanium or nitrogen into the nanociusters, etching a selected portion of the insulating layer using a dry etch process, and removing the layer of nanoclusters using a wet etch process that is selective to an insulating layer.
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Muralidhar Ramachandran
Rao Rajesh A.
Steimle Robert F.
Freescale Semiconductor Inc.
Hill Daniel D.
King Robert L.
Smith Matthew
Stark Jarrett J.
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