Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-01-16
2007-01-16
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S226000, C365S189011
Reexamination Certificate
active
11191741
ABSTRACT:
An array of SRAM cells (e.g., 6T single-ended or 8T differential cells) and method is discussed having variable high and low voltage power supplies to provide to selected cells of the array a write bias condition during a write operation and a read bias condition to the array during a read operation, wherein the read bias condition is different from the write bias condition.
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U.S. Appl. No. 11/191,348, filed Jul. 28, 2005, Redwine.
Deng Xiaowei
Houston Theodore W.
Brady III W. James
Dinh Son T.
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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