SRAM cell with column select line

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S226000, C365S189011

Reexamination Certificate

active

11191741

ABSTRACT:
An array of SRAM cells (e.g., 6T single-ended or 8T differential cells) and method is discussed having variable high and low voltage power supplies to provide to selected cells of the array a write bias condition during a write operation and a read bias condition to the array during a read operation, wherein the read bias condition is different from the write bias condition.

REFERENCES:
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patent: 5353251 (1994-10-01), Uratani et al.
patent: 5469380 (1995-11-01), Iio
patent: 5475638 (1995-12-01), Anami et al.
patent: 5828597 (1998-10-01), Madan
patent: 5831897 (1998-11-01), Hodges
patent: 6091626 (2000-07-01), Madan
patent: 6549453 (2003-04-01), Wong
patent: 6741500 (2004-05-01), DeShazo et al.
patent: 6831871 (2004-12-01), Khellah et al.
U.S. Appl. No. 11/191,348, filed Jul. 28, 2005, Redwine.

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