Structure for measuring the etching speed

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With measuring – sensing – detection or process control means

Reexamination Certificate

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Details

C118S715000, C118S716000, C118S717000, C118S718000, C118S728000, C118S731000, C118S732000, C118S733000

Reexamination Certificate

active

10875306

ABSTRACT:
The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor system is measured to obtain the etching speed. In consideration of the errors of the resistors, the invention also provides a structure that utilizes an IC layout technique to put an interdigitized dummy resistor beside the sensing resistors. By taking the ratio of the equivalent resistance of the sensing resistors and the dummy resistor, the invention can compute to obtain the etching speed.

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patent: 6642877 (2003-11-01), Leung
patent: 2003/0001594 (2003-01-01), Hasbani
patent: 2004/0182513 (2004-09-01), Barnes et al.
patent: 2006/0006981 (2006-01-01), Seo et al.
patent: 2006/0194102 (2006-08-01), Keshishian et al.
patent: 04096346 (1992-03-01), None
In-Situ Etch Rate Sensor Arrays for Plasma Etch Processes, Mason Freed, Department of Mechanical Engineering, University of California, Berkeley, May 21, 1999.

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