Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-18
2007-09-18
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S687000, C438S638000, C438S693000, C257SE21304
Reexamination Certificate
active
10999263
ABSTRACT:
Disclosed herein are a CMP slurry composition with high-planarity and a CMP process for polishing a dielectric film using the same. More specifically, a CMP slurry composition with high-planarity includes a carbon compound having tens of thousands of carboxyl groups and having a molecular weight ranging from hundreds of thousands to millions, an abrasive, and water. A CMP process for polishing a dielectric film utilizes the disclosed slurry composition. The slurry composition enables complete and overall planarization of the dielectric film by polishing the part of the film having a higher step difference through CMP process. Accordingly, the disclosed slurry composition is useful for the CMP process of all semiconductor devices including those having ultrafine patterns.
REFERENCES:
patent: 2002/0037642 (2002-03-01), Wake et al.
patent: 2003-082380 (2003-03-01), None
patent: 2003-082380 (2003-03-01), None
Official Action dated Oct. 31, 2005, issued by the Korean Intellectual Property Office, in connection with the Korean counterpart application.
Jung Jong Goo
Lee Sang Ick
Park Hyung Soon
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Sarkar Asok K.
Yevsikov Victor V.
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