Method of forming transistors with ultra-short gate feature

Details Method of forming transistors with ultra-short gate feature Method of forming transistors with ultra-short gate feature

2007-04-10

2007-04-10

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S307000, C257SE21435

Reexamination Certificate

active

11022005

ABSTRACT:
A gate electrode is formed over but insulated from a semiconductor body region for each of first and second transistors. A DDD implant is carried out to from DDD source and DDD drain regions in the body region for the first transistor. After the DDD implant, off-set spacers are formed along side-walls of the gate electrode of each of the first and second transistors. After forming the off-set spacers, a LDD implant is carried out to from LDD source and drain regions in the body region for the second transistor. After the LDD implant, main spacers are formed adjacent the off-set spacers of at least the second transistor. After forming the main spacers, a source/drain implant is carried out to form a highly doped region within each of the DDD drain and source regions and the LDD drain and source regions.

REFERENCES:
patent: 4939558 (1990-07-01), Smayling et al.
patent: 5396098 (1995-03-01), Kim et al.
patent: 5716861 (1998-02-01), Moslehi
patent: 5780891 (1998-07-01), Kauffman et al.
patent: 5793089 (1998-08-01), Fulford, Jr. et al.
patent: 5918125 (1999-06-01), Guo et al.
patent: 5920783 (1999-07-01), Tseng et al.
patent: 6124159 (2000-09-01), Chu
patent: 6143606 (2000-11-01), Wang et al.
patent: 6187619 (2001-02-01), Wu
patent: 6330187 (2001-12-01), Choi et al.
patent: 6346725 (2002-02-01), Ma et al.
patent: 6350665 (2002-02-01), Jin et al.
patent: 6512273 (2003-01-01), Krivokapic et al.

Affiliated with

Also associated with

Rating

Method of forming transistors with ultra-short gate feature does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming transistors with ultra-short gate feature, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming transistors with ultra-short gate feature will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3728743