Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2007-01-02

2007-01-02

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S223000

Reexamination Certificate

active

09828862

ABSTRACT:
A semiconductor device including an NMOSFET which has an n-type source/drain main region containing arsenic and an n-type source/drain buffer region having arsenic and phosphorous of which a concentration is lower than that of the source/drain main region, and the concentration of the phosphorous in the source/drain buffer region is smaller than the concentration of the arsenic therein. The semiconductor device has a suppressed reverse short channel effect and reduced p-n junction leakage current. Further, the semiconductor device has a larger margin to a certain gate length and a specified threshold voltage to elevate a production yield.

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