Epitaxial semiconductor deposition methods and structures

Details Epitaxial semiconductor deposition methods and structures Epitaxial semiconductor deposition methods and structures

2007-07-03

2007-07-03

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257S190000

Reexamination Certificate

active

10800390

ABSTRACT:
Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

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