Semiconductor processing methods

Details Semiconductor processing methods Semiconductor processing methods

2007-09-18

2007-09-18

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C257S374000

Reexamination Certificate

active

11166490

ABSTRACT:
The invention includes methods in which common processing steps are utilized during fabrication of components of a memory array region of a semiconductor substrate and components of a peripheral region proximate the memory array region, and yet the components of the peripheral region are built for different performance characteristics than the components of the memory array region. The methods can include laterally recessing nitride-containing masking structures associated with the peripheral region to a greater extent than nitride-containing masking structures associated with the memory array region, followed by thermal oxidation of the substrate to form dielectric material adjacent the masking structures.

REFERENCES:
patent: 6949801 (2005-09-01), Parat et al.
patent: 6995095 (2006-02-01), Yu
patent: 2006/0270181 (2006-11-01), Sandhu et al.

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