Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-18
2007-09-18
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S324000, C438S261000, C438S263000, C438S287000, C438S288000
Reexamination Certificate
active
11167543
ABSTRACT:
A non-volatile memory is described having memory cells with a gate dielectric. The gate dielectric is a multilayer charge trapping dielectric between a control gate and a channel region of a transistor to trap positively charged holes. The multilayer charge trapping dielectric comprises two layers of dielectric having different band gaps such that holes are trapped at a barrier between the two layers.
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Ahn Kie Y.
Forbes Leonard
Lee Hsien-Ming
Schwegman Lundberg & Woessner, P.A.
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