Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-04-10

2007-04-10

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S770000

Reexamination Certificate

active

11003926

ABSTRACT:
The present invention relates to a semiconductor device fabrication method, which includes forming an inter metal dielectric on a semiconductor substrate having wirings and planarizing the inter metal dielectric through a chemical mechanical polishing, wherein the inter metal dielectric is formed by carrying out at least one cycle of depositing polycrystalline silicon, plasma-processing the polycrystalline silicon, and oxidizing the polycrystalline silicon.

REFERENCES:
patent: 6174800 (2001-01-01), Jang
patent: 6495208 (2002-12-01), Desu et al.
patent: 6495478 (2002-12-01), Jang
patent: 6559030 (2003-05-01), Doan et al.
patent: 6649488 (2003-11-01), Lee et al.
patent: 2002/0106907 (2002-08-01), Chang

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