Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-04-17

2007-04-17

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S245000, C438S248000, C438S388000, C257S301000, C257S300000

Reexamination Certificate

active

11024733

ABSTRACT:
A semiconductor device and method for fabricating the same. The semiconductor device including a first conductive type semiconductor substrate having an active region and a field region defined thereon, and a trench formed in the field region. The semiconductor device also includes a storage dielectric film on an inside surface of the trench, a storage electrode of a capacitor in the trench having the dielectric film formed therein, and an active cell isolation film in the trench on the storage electrode. The semiconductor device further includes a transistor on the semiconductor substrate in the active region, the transistor having gate and a source and/or drain region formed such that the source and/or drain region is electrically connected to the storage electrode.

REFERENCES:
patent: 6204527 (2001-03-01), Sudo et al.
patent: 2001/0053577 (2001-12-01), Forbes et al.
patent: 2004/0106254 (2004-06-01), Furuhata et al.

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