Memory utilizing oxide-conductor nanolaminates

Details Memory utilizing oxide-conductor nanolaminates Memory utilizing oxide-conductor nanolaminates

2007-05-22

2007-05-22

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257S321000, C257S324000, C257S325000, C257SE27103

Reexamination Certificate

active

10191336

ABSTRACT:
Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A floating gate is separated from the channel region by a first gate oxide. The floating gate includes oxide-conductor nanolaminate layers to trap charge in potential wells formed by different electron affinities of the oxide-conductor nanolaminate layers.

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