Method of using carbon spacers for critical dimension (CD)...

Details Method of using carbon spacers for critical dimension (CD)... Method of using carbon spacers for critical dimension (CD)...

2007-01-30

2007-01-30

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S618000, C438S701000, C438S702000, C438S703000, C438S712000, C438S508000, C438S508000, C438S508000, C216S039000, C257SE21305, C257SE21249

Reexamination Certificate

active

10170984

ABSTRACT:
A method of using carbon spacers for critical dimension reduction can include providing a patterned photoresist layer above a substrate where the patterned photoresist layer has an aperture with a first width, depositing a carbon film over the photoresist layer and etching the deposited carbon film to form spacers on lateral side walls of the aperture of the patterned photoresist layer, etching the substrate using the formed spacers and patterned photoresist layer as a pattern to form a trench having a second width, and removing the patterned photoresist layer and formed spacers using an oxidizing etch.

REFERENCES:
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 5445710 (1995-08-01), Hori et al.
patent: 5882535 (1999-03-01), Stocks et al.
patent: 2001/0035558 (2001-11-01), Smith et al.
patent: 2003/0091938 (2003-05-01), Fairbairn et al.

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