Silicon nanocrystal capacitor and process for forming same

Details Silicon nanocrystal capacitor and process for forming same Silicon nanocrystal capacitor and process for forming same

2007-09-18

2007-09-18

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21008, C257SE21011, C257SE21013, C257SE21060

Reexamination Certificate

active

11193719

ABSTRACT:
A storage capacitor plate for a semiconductor assembly comprising a substantially continuous porous conductive storage plate comprising silicon nanocrystals residing along a surface of a conductive material and along a surface of a coplanar insulative material adjacent the conductive material, a capacitor cell dielectric overlying the silicon nanocrystals and an overlying conductive top plate. The conductive storage plate is formed by a semiconductor fabrication method comprising forming silicon nanocrystals on a surface of a conductive material and on a surface of an insulative material adjacent the conductive material, wherein silicon nanocrystals contain conductive impurities and are adjoined to formed a substantially continuous porous conductive layer.

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