Method of IC production using corrugated substrate

Details Method of IC production using corrugated substrate Method of IC production using corrugated substrate

2007-09-04

2007-09-04

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S196000, C372S045013

Reexamination Certificate

active

11173230

ABSTRACT:
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.

REFERENCES:
patent: 3912556 (1975-10-01), Grenon et al.
patent: 4377865 (1983-03-01), Sugino et al.
patent: 5066603 (1991-11-01), Bulat et al.
patent: 5932911 (1999-08-01), Yue et al.
patent: 6111296 (2000-08-01), Yamazaki et al.
patent: 6355532 (2002-03-01), Seliskar et al.
patent: 6706571 (2004-03-01), Yu et al.
patent: 6812508 (2004-11-01), Fukumi
patent: 2004/0099925 (2004-05-01), Poveda
patent: 2004/0108559 (2004-06-01), Sugii et al.
patent: 2005/0023569 (2005-02-01), Yang
patent: 2005/0056892 (2005-03-01), Seliskar
patent: 2005/0202604 (2005-09-01), Cheng et al.
patent: 2005/0224800 (2005-10-01), Lindert et al.
patent: 2005/0224875 (2005-10-01), Anderson et al.
patent: 2005/0224890 (2005-10-01), Bernstein et al.
patent: 2005/0239254 (2005-10-01), Chi et al.
patent: 2005/0285186 (2005-12-01), Fujiwara

Affiliated with

Also associated with

Rating

Method of IC production using corrugated substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of IC production using corrugated substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of IC production using corrugated substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3722440