Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-06
2007-03-06
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C438S287000, C438S733000, C438S630000, C257SE21263
Reexamination Certificate
active
10519799
ABSTRACT:
After forming a silicon oxide film9on the surface of a region A of a semiconductor substrate1,a high dielectric constant insulating film10,a silicon film, a silicon oxide film14are successively deposited over the semiconductor substrate1,and they are patterned to leave the silicon oxide film14in regions for forming gate electrodes. Then, after fabricating silicon films13nand13pby using the patterned silicon oxide film14as a mask, when removing the silicon oxide film14,etching is performed under the condition where the etching selectivity of the silicon oxide film14to the high dielectric constant insulating film10becomes large, thereby leaving the high dielectric constant insulating film10also to portions below the end of the gate electrodes (13n,13p). Thus, it is possible to ensure the voltage withstanding thereof and improve the characteristics of MISFET.
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Furukawa Ryoichi
Hiraiwa Atsushi
Sakai Satoshi
Yamamoto Satoshi
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Renesas Technology Corp.
Sarkar Asok K.
Yevsikov Victor V.
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