Semiconductor substrate and semiconductor circuit formed...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S118000, C438S240000, C438S243000, C438S386000, C438S387000, C438S406000, C438S455000, C257SE27137, C257SE23020, C257SE23040, C257SE21567

Reexamination Certificate

active

10523944

ABSTRACT:
A semiconductor substrate and a semiconductor circuit formed therein and associated fabrication methods are provided. A multiplicity of depressions with a respective dielectric layer and a capacitor electrode are formed for realizing buried capacitors in a carrier substrate and an actual semiconductor component layer being insulated from the carrier substrate by an insulation layer.

REFERENCES:
patent: 5055898 (1991-10-01), Beilstein et al.
patent: 5739565 (1998-04-01), Nakamura et al.
patent: 6306719 (2001-10-01), Lee
patent: 6441424 (2002-08-01), Klose et al.
patent: 100 55 711 (2002-05-01), None
patent: 101 33 688 (2002-09-01), None
patent: 0 553 791 (1993-08-01), None
patent: 0 921 572 (1998-08-01), None
patent: 63151071 (1988-06-01), None
patent: 02035770 (1990-02-01), None
patent: WO 99/25026 (1999-05-01), None
International Search Report from corresponding International application No. PCT/DE03/03044.
Examination Report from corresponding International application No. PCT/DE03/03044.

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