Memory built-in self test circuit with full error mapping...

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital logic testing

Reexamination Certificate

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Details

C714S718000, C714S736000, C365S201000

Reexamination Certificate

active

10755503

ABSTRACT:
A new built-in self-test circuit device for testing an embedded memory array is achieved. The device comprises a pattern generator unit that executes a testing sequence to automatically write and read locations in an embedded memory. A comparison unit compares data read from the embedded memory and expected data provided by the pattern generator. An error signal is turned ON by the comparison unit when the data read does not match the data provided. An error release unit generates an error stop signal. The error stop signal is turned ON when the error signal is turned ON. The pattern generator unit testing sequence is stopped when the error stop signal is turned ON and is re-started when the error stop signal is turned OFF. The error stop signal is turned OFF when an external device asserts an error release signal.

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Takeshima et al “A 55-ns 16-Mb DRAM with Built-in Self-Test Functioin Using Microprogram ROM” IEEE Journal of Solid-State Circuits, vol. 25, No. 4, Aug. 1990.
Franklin et al “Built-in Self-Testing of Random-Access Memories” pp. 45-56, 23(1990) Oct., No. 10, Los Alamitos, CA, US.

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