Method for making a semiconductor structure using silicon...

Details Method for making a semiconductor structure using silicon... Method for making a semiconductor structure using silicon...

2007-03-27

2007-03-27

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S285000, C438S299000, C438S300000, C438S301000, C257SE21054

Reexamination Certificate

active

10851347

ABSTRACT:
Silicon carbon is used as a diffusion barrier to germanium so that a silicon layer can be subsequently formed without being contaminated with germanium. This is useful in separating silicon layers from silicon germanium layers in situations in which both silicon and silicon germanium are desired to be present on the same semiconductor device such as for providing different materials for optimizing carrier mobility between N and P channel transistors and for a raised source/drain of silicon in the case of a silicon germanium body.

REFERENCES:
patent: 6124627 (2000-09-01), Rodder
patent: 6365465 (2002-04-01), Chan et al.
patent: 6492216 (2002-12-01), Yeo
patent: 6512252 (2003-01-01), Takagi et al.
patent: 6621131 (2003-09-01), Murthy
patent: 6656782 (2003-12-01), Skotnicki
patent: 2004/0092085 (2004-05-01), Kanzawa et al.
patent: 2002329673 (2002-11-01), None
Pezoldt et al., “SIMS and AES Investigation on the Influence of Ge Predeposition on the Interface Quality Between SiC and Si,” Nanotechnology, Center of Mirco- and Nanotechnologies, TU Ilemanau, Germany, 7 pgs, No date.
De Salvador et al., “Carbon Precipitation and Diffusion in SiGeC Alloys Under Silicon Self-Interstitial Injection,” Appl. Phys. A 75, pp. 667-672 (2001).
Kulik et al., “The Effect of Composition on the Thermal Stability of Si1-x-yGexCy/Si Heterostructures,” American Institute of Physics, pp. 1972-1974 (1998).
Morales et al., “Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111),” Dpto. De Ciencia de los Materiales e Ingernieria Metalurgica y Quimica Inorganica, Universidad de Cadiz, 4 pgs, No date.

Affiliated with

Also associated with

Rating

Method for making a semiconductor structure using silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a semiconductor structure using silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a semiconductor structure using silicon... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3721633