Define via in dual damascene process

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C257SE21579, C257SE23151, C257SE23169

Reexamination Certificate

active

10603041

ABSTRACT:
The invention includes a process for manufacturing an integrated circuit, comprising providing a substrate comprising a dielectric layer over a conductive material, depositing a hardmask over the dielectric layer, applying a first photoresist over the hardmask and photodefining a trench, etching the hard mask and partially etching the dielectric to form a trench having a bottom, stripping the photoresist, applying a second photoresist and photodefining a slit across the trench, selectively etching the dielectric from the bottom of the trench down to the underlying conductive material. Both the hardmask and the second photoresist are used as a mask. Later, a connection to the underlying metal is formed and integrated circuits made thereby.

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patent: 6060380 (2000-05-01), Subramanian et al.
patent: 6162587 (2000-12-01), Yang et al.
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patent: 2 330 453 (1999-04-01), None
patent: 2 345 791 (2000-07-01), None
patent: WO 95/08840 (1995-03-01), None

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