Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-26
2006-12-26
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S259000, C438S954000, C257SE21179
Reexamination Certificate
active
07154142
ABSTRACT:
A non-volatile memory device having a substrate, an n type well, a p type well, a control gate, a composite dielectric layer, a source region and a drain region is provided. A trench is formed in the substrate. The n type well is formed in the substrate. The p type well is formed in the substrate above the n type well. The junction of p type well and the n type well is higher than the bottom of the trench. The control gate which protruding the surface of substrate is formed on the sidewalls of the trench. The composite dielectric layer is formed between the control gate and the substrate. The composite dielectric layer includes a charge-trapping layer. The source region and the drain region are formed in the substrate of the bottom of the trench respectively next to the sides of the control gate.
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“Novel Bi-Directional Tunneling Program/Erase NOR (BINOR)-Type Flash EEPROM” By Evans Ching-Song Yang et al. / Jun. 1999 IEEE Transactions on Electron Devices, vol. 46, No. 6/pp. 1294-1296.
Cho Chih-Chen
Wong Wei-Zhe
Yang Ching-Sung
Booth Richard A.
J.C. Patents
Powerchip Semiconductor Corp.
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