Semiconductor integrated circuit including a DRAM and an...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S253000, C438S393000, C438S672000, C438S675000

Reexamination Certificate

active

07118957

ABSTRACT:
A semiconductor device including an interlayer insulation film formed on a substrate so as to cover first and second regions defined on the substrate, and a capacitor formed over the interlayer insulation film in the first region, wherein the interlayer insulation film includes, in the first region, a stepped part defined by a groove having a bottom surface lower in level than a surface of the interlayer insulation film in the second region.

REFERENCES:
patent: 5391905 (1995-02-01), Yamazaki
patent: 5406103 (1995-04-01), Ogawa
patent: 5504029 (1996-04-01), Murata et al.
patent: 5858869 (1999-01-01), Chen et al.
patent: 5945702 (1999-08-01), Nakanishi
patent: 6020644 (2000-02-01), Tanigawa
patent: 6124622 (2000-09-01), Tsutsumi
patent: 6130102 (2000-10-01), White et al.
patent: 6194758 (2001-02-01), Tanaka et al.
patent: 59-200453 (1984-11-01), None
patent: 02177558 (1990-07-01), None
patent: 4-348568 (1992-12-01), None
patent: 6-104258 (1994-04-01), None
patent: 7-235616 (1995-09-01), None
Rudolf E. Graf, Dictionary of Electronics, 1999, Reed Elsevier, 7thEd. p. 96.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor integrated circuit including a DRAM and an... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit including a DRAM and an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit including a DRAM and an... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3717806

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.