Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2006-10-31

2006-10-31

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S287000, C438S288000, C438S591000

Reexamination Certificate

active

07129136

ABSTRACT:
A semiconductor memory device which more reliably retains electrons trapped in its charge-trapping regions. A high-dielectric gate insulating film is grown on a semiconductor substrate. This gate insulating film is composed of first and second oxides, where the second oxide has a smaller bandgap than that of the first oxide and is scattered in dot-like form, surrounded by the first oxide. The memory cell is programmed by injecting electrons into a local potential minimum that is produced due to the bandgap difference between the phase-separated first and second oxides.

REFERENCES:
patent: 5292673 (1994-03-01), Shinriki et al.
patent: 5874761 (1999-02-01), Nakao
patent: 5998264 (1999-12-01), Wu
patent: 6060743 (2000-05-01), Sugiyama et al.
patent: 6208000 (2001-03-01), Tanamoto et al.
patent: 6309927 (2001-10-01), Au et al.
patent: 6607952 (2003-08-01), Yagishita et al.
patent: 6737716 (2004-05-01), Matsuo et al.
patent: 2002/0185674 (2002-12-01), Kawashima et al.
patent: 2003/0021079 (2003-01-01), Natori et al.
patent: 2003/0092238 (2003-05-01), Eriguchi
patent: 2003/0173586 (2003-09-01), Moriwaki et al.
patent: 2003/0183859 (2003-10-01), Gnafinger
patent: 2003/0206445 (2003-11-01), Forbes
patent: 11186421 (1999-07-01), None
patent: 2002110999 (2002-04-01), None
patent: 2004119649 (2004-04-01), None
Patent Abstracts of Japan, Publication No. 07-221208, dated Aug. 18, 1995.
Patent Abstracts of Japan, Publication No. 08-008350, dated Jan. 12, 1996.
Patent Abstracts of Japan, Publication No. 10-262873, dated Oct. 6, 1998.
Patent Abstracts of Japan, Publication No. 11-003981, dated Jan. 6, 1999.
Patent Abstracts of Japan, Publication No. 2000-009181, dated Jan. 11, 2000.

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