Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-10
2006-10-10
Pizarro, Marcos D. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21065, C257SE21182, C257SE21207
Reexamination Certificate
active
07118973
ABSTRACT:
The vertical diffusion of dopants from the gate and the bulk material into the channel region, and the lateral diffusion of dopants from the source and drain regions into the channel region resulting from thermal cycling during the fabrication of a MOS transistor is minimized by forming the source and drain regions in a layer of composite material that includes silicon, germanium, and carbon.
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Wolf, Silicon Processing for the VLSI Era vol. 1: Process Technology; 1986; Lattice Press, Sunset Beach, California; pp. 155.
National Semiconductor Corporation
Pickering Mark C.
Pizarro Marcos D.
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