Method of manufacturing semiconductor device having step gate

Details Method of manufacturing semiconductor device having step gate Method of manufacturing semiconductor device having step gate

Filed on

2006-12-12

Date issued

2006-12-12

Examiner

Lebentritt, Michael (Department: 2812)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

C438S589000, C438S595000, C257SE21438, C257SE21507, C257SE21262

Type

Reexamination Certificate

Status

active

Patent number

07148108

Description

ABSTRACT:
Disclosed herein is a method of manufacturing a semiconductor device having a step gate, which can improve the refresh characteristics of the device. The method comprises the steps of: forming on a silicon substrate having active and field regions a first hard mask exposing the field region; etching the exposed field region to form a trench; forming an isolation film by filling an insulating film in the trench; forming a second hard mask exposing both sides of the active region by etching the first hard mask; forming a metal film on the resulting substrate including the second hard mask; forming a metal silicide film on both sides of the active region by annealing the resulting substrate; removing the metal film unreacted in the annealing step and the metal silicide film, thereby recessing both sides of the active region; removing the second hard mask; and forming a step gate on both edges of the central portion of the active region and the recessed portion of the active region, adjacent to each of the edges.

REFERENCES:
patent: 5254495 (1993-10-01), Lur et al.
patent: 5776817 (1998-07-01), Liang
patent: 6451693 (2002-09-01), Woo et al.

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