Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-12-05

2006-12-05

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S301000, C257S532000

Reexamination Certificate

active

07145197

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a trench formed in the semiconductor substrate, an island-like element region formed in the semiconductor substrate, having an upper surface, first to third side surfaces, an upper portion, a middle portion and a lower portion, a gate insulating film formed on the first to third side surfaces in the upper portion of the element region, a gate electrode having first and second bottom surfaces, a first diffusion layer formed along the upper surface of the element region, a second diffusion layer formed along the first side surface in the middle portion of the element region, a channel region having first to third regions formed along the first to third side surfaces in the upper portion of the element region, a capacitor formed in the trench, and a bit line electrically connected to the first diffusion layer.

REFERENCES:
patent: 6063658 (2000-05-01), Horak et al.
patent: 6074909 (2000-06-01), Gruening
patent: 6255683 (2001-07-01), Radens et al.
patent: 6432774 (2002-08-01), Heo et al.
patent: 6436836 (2002-08-01), Gobel
patent: 6734484 (2004-05-01), Wu
patent: 2002/0076880 (2002-06-01), Yamada et al.
patent: 2000-196045 (2000-07-01), None

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