Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-07
2006-02-07
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S752000
Reexamination Certificate
active
06995054
ABSTRACT:
A semiconductor device having an MODFET and at least one other device formed on one identical semiconductor substrate, in which an intrinsic region for the MODFET is formed by selective growth in a groove formed on a semiconductor substrate having an insulation film on the side wall of the groove, and single-crystal silicon at the bottom of the groove, is disclosed. The step between the MODFET and the at least one other device mounted together on one identical substrate can be thereby decreased, and each of the devices can be reduced in the size and integrated to a high degree, and the interconnection length can be shortened to reduce power consumption.
REFERENCES:
patent: 6350993 (2002-02-01), Chu et al.
patent: 0307850 (1988-09-01), None
Konig et al., “p-Type SiGe Channel Modulation Doped Field-Effect Transistors with Post-Evaporation Patterned Submicrometre Schottky Gates,” IEEE Electronics Letters, vol. 29, No. 5, Mar. 4, 1993, pp. 486-688.
Konig et al., “p-Type Ge-Channel MODFET's with High Transconductance Grown on Si Substrates,” IEEE Electron Device Letters, vol. 14, No. 4, Apr. 1993, pp. 205-207.
Konig et al., “Enhancement Mode n-Channel Si/SiGe MODFET with High Intrinsic Transconductance,” IEE Electronics Letters, vol. 28, No. 2, Jan. 16, 1992, pp. 160-162.
Sadek et al., “Design on Si/SIGe Heterojunction Complementary Metal-Oxide-Semiconductor Transistors,” IEEE Transactions on Electron Devices, vol. 43, No. 8, Aug. 1996, pp. 1224-1232.
Oda Katsuya
Washio Katsuyoshi
A. Marquez, Esq. Juan Carlos
Coleman W. David
Fisher Esq. Stanley P.
Reed Smith LLP
Renesas Technology Corp.
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