Standby current reduction over a process window with a...

Details Standby current reduction over a process window with a... Standby current reduction over a process window with a...

2006-06-13

2006-06-13

Tran, Mai-Huong (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S299000, C257S371000, C257S372000, C327S535000, C327S566000

Reexamination Certificate

active

07060566

ABSTRACT:
An integrated circuit device including a plurality of MOSFETs of similar type and geometry is formed on a substrate with an ohmic contact, and an adjustable voltage source on the die utilizing clearable fuses is coupled between the ohmic contact and the sources of the MOSFETs. After die processing, a post-processing test is performed to measure an operating characteristic of the die such as leakage current or switching speed, and an external voltage source is applied and adjusted to control the operating characteristic. The on-die fuses are then cleared to adjust the on-die voltage source to match the externally applied voltage. The operating characteristic may be determined by including a test circuit on the die to exhibit the operating characteristic such as a ring oscillator frequency. This approach to controlling manufacturing-induced device performance variations is well suited to efficient manufacture of small feature-size circuits such as DRAMs.

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patent: 6605981 (2003-08-01), Bryant et al.
Pierret, R.,Semiconductor Device Fundamentals, 1996, Addison-Wesley Publishing Company, Inc., pp. 680-681.

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