Method of manufacturing semiconductor device with triple...

Details Method of manufacturing semiconductor device with triple... Method of manufacturing semiconductor device with triple...

2006-02-21

2006-02-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C257S406000

Reexamination Certificate

active

07001815

ABSTRACT:
An object of the present invention is to provide a method of manufacturing a semiconductor device with triple gate insulating layers that is capable of easily obtaining thicknesses and good qualities of the gate insulating layers being opportune to multiple devices.In the present invention, gate insulating layers having thicknesses and good qualities corresponding to each of transistors can be easily formed in a semiconductor device with triple gate insulating layers by using dummy gates. Furthermore, in the present invention, a device of high integration density is easily manufactured, as gates of a high voltage device region and a middle voltage device region have finer line widths than a gate of a low voltage device region by forming them using dummy gates.

REFERENCES:
patent: 6204137 (2001-03-01), Teo et al.
patent: 6329697 (2001-12-01), Shin
patent: 6365450 (2002-04-01), Kim
patent: 6406945 (2002-06-01), Lee et al.
patent: 6515338 (2003-02-01), Inumiya
patent: 6544827 (2003-04-01), Abiko
patent: 6879001 (2005-04-01), Yagishita et al.
patent: 2004/0173854 (2004-09-01), Kwon et al.

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