Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-08-08

2006-08-08

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S591000, C438S785000

Reexamination Certificate

active

07087495

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a first insulating film on a substrate, forming a second insulating film on the first insulating film, and forming a gate electrode on the second insulating film. Forming the second insulating film includes supplying film-forming materials and adsorbing the film-forming materials on the first insulating film, purging the film-forming materials that have not been adsorbed, supplying oxidants to oxidize the adsorbed film-forming materials, and purging the oxidants that have not contributed to oxidization. Forming the second insulating film is repeated in cycles, continuously, and the purging time of the oxidants in an initial number of the cycles is longer than the purging time of the oxidants in cycles following the initial number of cycles.

REFERENCES:
patent: 6348373 (2002-02-01), Ma et al.
patent: 6884719 (2005-04-01), Chang et al.
patent: 2004/0175882 (2004-09-01), Ahn et al.
Blin, et al., “Study of the initial steps of ALD HfO2growth on SiO2”, Atomic Layer Deposition (ALD) 2002, American Vacuum Society Topical Conference, Aug. 19-21, 2002, Hanyang Institute of Technology, Hanyang University, Seoul, Korea.

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