Method of making a non-volatile memory using a plasma...

Details Method of making a non-volatile memory using a plasma... Method of making a non-volatile memory using a plasma...

2006-02-14

2006-02-14

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S591000

Reexamination Certificate

active

06998317

ABSTRACT:
A method of fabricating a non-volatile memory device includes preparing a substrate; depositing a layer of HfO2by atomic layer deposition; annealing the substrate and HfO2layer in situ; exposing the HfO2layer to a plasma discharge, thereby forming a charge-trapping layer; depositing a gate structure; and completing the memory device.

REFERENCES:
patent: 6008091 (1999-12-01), Gregor et al.
patent: 6528845 (2003-03-01), Bude et al.
patent: 6613695 (2003-09-01), Pomarede et al.
patent: 2002/0000592 (2002-01-01), Fujiwara
patent: WO 0113378 (2001-02-01), None
patent: WO 2003003473 (2003-01-01), None
Tzeng et al., “Plasma-Charging Effects on Submicron MOS Devices”, Jul. 2002, IEEE Transactions on Electron Devices, vol. 49, No. 7, pp. 1151-1157.

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