Integrated ashing and implant annealing method using ozone

Details Integrated ashing and implant annealing method using ozone Integrated ashing and implant annealing method using ozone

2006-11-28

2006-11-28

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21079, C257SE21082, C430S329000

Reexamination Certificate

active

07141513

ABSTRACT:
After ion implantation, thermal ashing is performed using ozone at a pressure of between about 0.01 to about 1000 Torr at below 1000° C. to remove the resist. Since the process includes a substantial amount of ozone, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate. Using ozone allows fast resist removal with minimal residue at low temperatures.

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