Transparent double-injection field-effect transistor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S609000, C257S214000

Reexamination Certificate

active

07132319

ABSTRACT:
A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

REFERENCES:
patent: 3544864 (1970-12-01), Richman
patent: 4458261 (1984-07-01), Omura
patent: 4766471 (1988-08-01), Ovshinsky et al.
patent: 4843446 (1989-06-01), Nishino
patent: 4882295 (1989-11-01), Czubatyj et al.
patent: 4958898 (1990-09-01), Friedman et al.
patent: 5128731 (1992-07-01), Lien et al.
patent: 5132676 (1992-07-01), Kimura et al.
patent: 5235443 (1993-08-01), Barnik et al.
patent: 5295009 (1994-03-01), Barnik et al.
patent: 5369291 (1994-11-01), Swanson
patent: 5434588 (1995-07-01), Parker
patent: 5744864 (1998-04-01), Cillessen et al.
patent: 5850123 (1998-12-01), Potter
patent: 6408257 (2002-06-01), Harrington et al.
patent: 6503831 (2003-01-01), Speakman
patent: 2002/0105033 (2002-08-01), Zhang
patent: 2003/0012870 (2003-01-01), Sakurada
patent: 2003/0047785 (2003-03-01), Kawasaki et al.
patent: 2004/0023432 (2004-02-01), Haga
patent: 0212328 (1987-03-01), None
patent: 1134811 (2001-09-01), None
patent: 2003-086808 (2003-03-01), None
Proceedings of the IEEE, Proceedings Letters, Nov. 1968, pp. 2094-2095.
Extended abstracts of the 2000 International Conference on Solid State Devices and Materials; Aug. 29-31, 2000, Sendai Intl Center, pp. 128-129.
Ohtomo, “Novel Semiconductor Technologies of ZnO Films towards . . . ”, IEICE Trans. Electron., vol. E83-C, No. 10, Oct. 2000, pp. 1614-1617.
C. G. Granqvist, Progress in electrochromics: tungsten oxide revisited, Electrochimica Acta V. 44 (1999) pp. 3005-3015.
L. Bouteiller et al., Polymer-dispersed liquid crystals: Preparation, operation and application, Liquid Crystals, V. 21 (2) (1996) pp. 157-174.
D. Coates, Polymer-dispersed Liquid Crystals, J. Mater. Chem. V. 5 (12) (1995) pp. 2063-2072.
M. Hack et al., Double-injection field-effect transistor: A new type of solid-state device, Appl. Phys. Letters V. 48 (20) (May 19, 1986) pp. 1386-1388.
M. Hack et al., Double-injection field-effect transistor: A new type of solid-state device, Mat. Res. Soc. Symp. Proc., V 70 (1986) pp. 643-646.
Y. Omura, Lateral Unidirectional Bipolar-Type Insulated-Gate Transistors, 14th Conf. on Solid State Devices, Tokyo, 1982, Japanese J. Appl. Phys. V. 22. Suppl. 22-1 (1983) pp. 263-266.
Boesen et al. “ZnO Field-Effect Transistor”, Proceedings of the IEEE, Nov. 1968, pp. 2094-2095, vol. 56, iss 11, pub IEEE, Dept of Elec. Engrg, Northwestern Univ, Evanston, IL.
Kawasaki et al, “Can ZnO Eat Market in Optoelectronic Applications?”, Extended Abstracts of the 2000 Intl Conf on Solid State Devices & Mtls, Sendai Intl Center, Aug. 29, 2000, pp. 128-129, Japan Society of Applied Physics, IEEE Electron Devices Society, Japan.
Ohtomo et al, “Novel Semiconductor Technologies of ZnO Films towards Ultraviolet LEDs and Invisible FETs”, IEICE Trans. Electron, Oct. 2000, pp. 1614-1617, vol. E83-C, No. 10, Institute of Electronics Information and Communication Engineers, Japan.

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