Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-11-14
2006-11-14
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S758000, C257SE21193
Reexamination Certificate
active
07135421
ABSTRACT:
A dielectric film containing HfAlO3and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition employing a hafnium sequence and an aluminum sequence. The hafnium sequence uses HfCl4and water vapor. The aluminum sequence uses either trimethylaluminum, Al(CH3)3, or DMEAA, an adduct of alane (AlH3) and dimethylethylamine [N(CH3)2(C2H5)], with distilled water vapor. These gate dielectrics containing a HfAlO3film are thermodynamically stable such that the HfAlO3film will have minimal reactions with a silicon substrate or other structures during processing.
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Ahn Kie Y.
Forbes Leonard
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