Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-15
2006-08-15
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S455000, C438S458000
Reexamination Certificate
active
07091070
ABSTRACT:
To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.
REFERENCES:
patent: 5256562 (1993-10-01), Vu et al.
patent: 5377031 (1994-12-01), Vu et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5877034 (1999-03-01), Ramm et al.
patent: 6127199 (2000-10-01), Inoue et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6521940 (2003-02-01), Vu et al.
patent: 2001/0015256 (2001-08-01), Yamazaki et al.
patent: 2002/0024051 (2002-02-01), Yamazaki et al.
patent: 2002/0030189 (2002-03-01), Ishikawa
patent: 2003/0025118 (2003-02-01), Yamazaki et al.
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2003/0047280 (2003-03-01), Takayama et al.
patent: 2003/0047732 (2003-03-01), Yamazaki et al.
patent: 10-125931 (1998-05-01), None
patent: 2002-184959 (2002-06-01), None
European Search Report (Application No. 04004369.7; EP6999/7000 dated Jan. 20, 2006).
Goto Yuugo
Imai Keitaro
Maruyama Junya
Ohno Yumiko
Takayama Toru
Ghyka Alexander
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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