Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-05
2006-12-05
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S241000, C438S287000, C438S685000, C438S773000
Reexamination Certificate
active
07144766
ABSTRACT:
When an oxidation treatment for regenerating a gate insulating film6is performed after forming gate electrodes7A of a polymetal structure in which a WNxfilm and a W film are stacked on a polysilicon film, a wafer1is heated and cooled under conditions for reducing a W oxide27on the sidewall of each gate electrode7A. As a result, the amount of the W oxide27to be deposited on the surface of the wafer1is reduced.
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Hozawa Kazuyuki
Kimura Shin'ichiro
Nishitani Eisuke
Suzuki Norio
Uchiyama Hiroyuki
Miles & Stockbridge P.C.
Renesas Technology Corp.
Toledo Fernando L.
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